1/f Electrical Noise in Planar Resistors: The Joint Effect of a Backgating Noise and an Instrumental Disturbance
Izpura Torres, José Ignacio
Electrónica
Any planar resistor (channel) close to a conducting layer left floating (gate) forms a capacitor C whose thermal voltage noise (kT/C noise) has a backgating effect on the sheet resistance of the channel that is a powerful source of 1/f resistance noise in planar resistors and, hence, in planar devices. This 1/f spectrum is created by the bias voltage V DS applied to the resistor, which is a disturbance that takes it out of thermal equilibrium and changes the resistance noise that existed in the unbiased device. This theory, which gives the first electrical explanation for 1/f electrical noise, not only gives a theoretical basis for the Hooge's formula but also allows the design of proper shields to reduce 1/f noise.
E.T.S.I. Telecomunicación (UPM)
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
2008-03
info:eu-repo/semantics/article
Artículo
IEEE Transactions on Instrumentation and Measurement, ISSN 0018-9456, 2008-03, Vol. 57, No. 3
PeerReviewed
application/pdf
eng
http://oa.upm.es/2038/1/INVE_MEM_2008_57462.pdf
http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=4447379&arnumber=4413160&count=26&index=6
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/altIdentifier/doi/10.1109/TIM.2007.911642
http://oa.upm.es/2038/