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α-Al2O3 sapphire and rubies deformed by dual basal slip at intermediate temperatures (900–1300 °C): II. Dissociation and stacking faults

Identificadores del recurso

1873-2453

http://hdl.handle.net/10396/27139

Procedencia

(Helvia: Repositorio Institucional de la Universidad de Córdoba)

Ficha

Título:: α-Al2O3 sapphire and rubies deformed by dual basal slip at intermediate temperatures (900–1300 °C): II. Dissociation and stacking faults
Tema:: Dislocations; Medium temperature deformation; Dissociation; Sapphire; Ruby
Descrición:: Sapphire and rubies (undoped and Cr-doped α-Al2O3 single crystals) have been deformed in compression at temperatures lower than those previously used in studies of dislocations in the basal slip plane. Above 1400 °C, several features associating stacking faults out of the basal planes and partial dislocations (dissociation and faulted dipoles) have been observed in previous transmission electron microscopy investigations. The formation of these features involves climb controlled by atomic diffusion. Properties of climb-dissociated dislocations are discussed in relation to dislocation dynamics. Transmission electron microscopy examination of dislocation structures at lower deformation temperatures (1000–1100 °C) shows that similar features are formed but that they often imply cross-slip. A new mechanism for the formation of faulted dipole by glide is presented and an explanation for the 30° Peierls valley orientation is proposed. The presence of chromium has a small influence on stacking fault energies on planes perpendicular to the basal plane.
Fonte:: Acta Materialia, Vol 57, Issue 10, pp 2879-2886 (2009)
Idioma:: English
Relación:: https://doi.org/10.1016/j.actamat.2009.02.043
Autor/Productor:: Castillo-Rodríguez, Miguel; Castaing, J.; Muñoz, A.; Veyssière, P.; Domínguez-Rodríguez, A.
Editor:: Elsevier
Dereitos:: https://creativecommons.org/licenses/by-nc-nd/4.0/; info:eu-repo/semantics/openAccess
Data:: 2024-02-06T07:49:37Z; 2009
Tipo de recurso:: info:eu-repo/semantics/article
Formato:: application/pdf

oai_dc

Descargar XML

<?xml version="1.0" encoding="UTF-8" ?>

<oai_dc:dc schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
1. <dc:title>α-Al2O3 sapphire and rubies deformed by dual basal slip at intermediate temperatures (900–1300 °C): II. Dissociation and stacking faults</dc:title>
2. <dc:creator>Castillo-Rodríguez, Miguel</dc:creator>
3. <dc:creator>Castaing, J.</dc:creator>
4. <dc:creator>Muñoz, A.</dc:creator>
5. <dc:creator>Veyssière, P.</dc:creator>
6. <dc:creator>Domínguez-Rodríguez, A.</dc:creator>
7. <dc:subject>Dislocations</dc:subject>
8. <dc:subject>Medium temperature deformation</dc:subject>
9. <dc:subject>Dissociation</dc:subject>
10. <dc:subject>Sapphire</dc:subject>
11. <dc:subject>Ruby</dc:subject>
12. <dc:description>Sapphire and rubies (undoped and Cr-doped α-Al2O3 single crystals) have been deformed in compression at temperatures lower than those previously used in studies of dislocations in the basal slip plane. Above 1400 °C, several features associating stacking faults out of the basal planes and partial dislocations (dissociation and faulted dipoles) have been observed in previous transmission electron microscopy investigations. The formation of these features involves climb controlled by atomic diffusion. Properties of climb-dissociated dislocations are discussed in relation to dislocation dynamics. Transmission electron microscopy examination of dislocation structures at lower deformation temperatures (1000–1100 °C) shows that similar features are formed but that they often imply cross-slip. A new mechanism for the formation of faulted dipole by glide is presented and an explanation for the 30° Peierls valley orientation is proposed. The presence of chromium has a small influence on stacking fault energies on planes perpendicular to the basal plane.</dc:description>
13. <dc:date>2024-02-06T07:49:37Z</dc:date>
14. <dc:date>2024-02-06T07:49:37Z</dc:date>
15. <dc:date>2009</dc:date>
16. <dc:type>info:eu-repo/semantics/article</dc:type>
17. <dc:identifier>1873-2453</dc:identifier>
18. <dc:identifier>http://hdl.handle.net/10396/27139</dc:identifier>
19. <dc:language>eng</dc:language>
20. <dc:relation>https://doi.org/10.1016/j.actamat.2009.02.043</dc:relation>
21. <dc:rights>https://creativecommons.org/licenses/by-nc-nd/4.0/</dc:rights>
22. <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
23. <dc:format>application/pdf</dc:format>
24. <dc:publisher>Elsevier</dc:publisher>
25. <dc:source>Acta Materialia, Vol 57, Issue 10, pp 2879-2886 (2009)</dc:source>
</oai_dc:dc>

edm

Descargar XML

<?xml version="1.0" encoding="UTF-8" ?>

<rdf:RDF schemaLocation="http://www.w3.org/1999/02/22-rdf-syntax-ns# http://www.europeana.eu/schemas/edm">
1. <edm:ProvidedCHO about="http://hdl.handle.net/10396/27139">
  1. <dc:title>α-Al2O3 sapphire and rubies deformed by dual basal slip at intermediate temperatures (900–1300 °C): II. Dissociation and stacking faults</dc:title>
  2. <dc:creator>Castillo-Rodríguez, Miguel</dc:creator>
  3. <dc:creator>Castaing, J.</dc:creator>
  4. <dc:creator>Muñoz, A.</dc:creator>
  5. <dc:creator>Veyssière, P.</dc:creator>
  6. <dc:creator>Domínguez-Rodríguez, A.</dc:creator>
  7. <dc:subject>Dislocations</dc:subject>
  8. <dc:subject>Medium temperature deformation</dc:subject>
  9. <dc:subject>Dissociation</dc:subject>
  10. <dc:subject>Sapphire</dc:subject>
  11. <dc:subject>Ruby</dc:subject>
  12. <dc:description>Sapphire and rubies (undoped and Cr-doped α-Al2O3 single crystals) have been deformed in compression at temperatures lower than those previously used in studies of dislocations in the basal slip plane. Above 1400 °C, several features associating stacking faults out of the basal planes and partial dislocations (dissociation and faulted dipoles) have been observed in previous transmission electron microscopy investigations. The formation of these features involves climb controlled by atomic diffusion. Properties of climb-dissociated dislocations are discussed in relation to dislocation dynamics. Transmission electron microscopy examination of dislocation structures at lower deformation temperatures (1000–1100 °C) shows that similar features are formed but that they often imply cross-slip. A new mechanism for the formation of faulted dipole by glide is presented and an explanation for the 30° Peierls valley orientation is proposed. The presence of chromium has a small influence on stacking fault energies on planes perpendicular to the basal plane.</dc:description>
  13. <dc:date>2009</dc:date>
  14. <dc:type>info:eu-repo/semantics/article</dc:type>
  15. <dc:identifier>1873-2453</dc:identifier>
  16. <dc:identifier>http://hdl.handle.net/10396/27139</dc:identifier>
  17. <dc:language>eng</dc:language>
  18. <dc:relation>https://doi.org/10.1016/j.actamat.2009.02.043</dc:relation>
  19. <dc:publisher>Elsevier</dc:publisher>
  20. <dc:source>Acta Materialia, Vol 57, Issue 10, pp 2879-2886 (2009)</dc:source>
  21. <edm:type>TEXT</edm:type>
  </edm:ProvidedCHO>
2. <ore:Aggregation about="http://hdl.handle.net/10396/27139">
  1. <edm:aggregatedCHO resource="http://hdl.handle.net/10396/27139" />
  2. <edm:dataProvider>Helvia (Universidad de Córdoba, Spain)</edm:dataProvider>
  3. <edm:isShownAt resource="http://hdl.handle.net/10396/27139" />
  4. <edm:provider>Hispana</edm:provider>
  5. <edm:rights resource="http://creativecommons.org/licenses/by-nc-nd/4.0/" />
  6. <edm:isShownBy resource="http://helvia.uco.es/xmlui/bitstream/10396/27139/1/8%20sapphire%20and%20rubies%20II.pdf" />
  7. <edm:object resource="http://helvia.uco.es/xmlui/bitstream/10396/27139/3/8%20sapphire%20and%20rubies%20II.pdf.jpg" />
  </ore:Aggregation>
3. <edm:WebResource about="http://helvia.uco.es/xmlui/bitstream/10396/27139/1/8%20sapphire%20and%20rubies%20II.pdf">
  1. <edm:rights resource="http://creativecommons.org/licenses/by-nc-nd/4.0/" />
  </edm:WebResource>
</rdf:RDF>

ese

Descargar XML

<?xml version="1.0" encoding="UTF-8" ?>

<europeana:record schemaLocation="http://www.europeana.eu/schemas/ese/ http://www.europeana.eu/schemas/ese/ESE-V3.4.xsd">
1. <dc:title lang="es-ES">α-Al2O3 sapphire and rubies deformed by dual basal slip at intermediate temperatures (900–1300 °C): II. Dissociation and stacking faults</dc:title>
2. <dc:creator lang="none">Castillo-Rodríguez, Miguel</dc:creator>
3. <dc:creator lang="none">Castaing, J.</dc:creator>
4. <dc:creator lang="none">Muñoz, A.</dc:creator>
5. <dc:creator lang="none">Veyssière, P.</dc:creator>
6. <dc:creator lang="none">Domínguez-Rodríguez, A.</dc:creator>
7. <dc:subject lang="es-ES">Dislocations</dc:subject>
8. <dc:subject lang="es-ES">Medium temperature deformation</dc:subject>
9. <dc:subject lang="es-ES">Dissociation</dc:subject>
10. <dc:subject lang="es-ES">Sapphire</dc:subject>
11. <dc:subject lang="es-ES">Ruby</dc:subject>
12. <dc:description>Sapphire and rubies (undoped and Cr-doped α-Al2O3 single crystals) have been deformed in compression at temperatures lower than those previously used in studies of dislocations in the basal slip plane. Above 1400 °C, several features associating stacking faults out of the basal planes and partial dislocations (dissociation and faulted dipoles) have been observed in previous transmission electron microscopy investigations. The formation of these features involves climb controlled by atomic diffusion. Properties of climb-dissociated dislocations are discussed in relation to dislocation dynamics. Transmission electron microscopy examination of dislocation structures at lower deformation temperatures (1000–1100 °C) shows that similar features are formed but that they often imply cross-slip. A new mechanism for the formation of faulted dipole by glide is presented and an explanation for the 30° Peierls valley orientation is proposed. The presence of chromium has a small influence on stacking fault energies on planes perpendicular to the basal plane.</dc:description>
13. <dc:type>info:eu-repo/semantics/article</dc:type>
14. <dc:identifier>uri:http://hdl.handle.net/10396/27139</dc:identifier>
15. <dc:language>eng</dc:language>
16. <dc:relation>https://doi.org/10.1016/j.actamat.2009.02.043</dc:relation>
17. <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
18. <dc:rights>https://creativecommons.org/licenses/by-nc-nd/4.0/</dc:rights>
19. <dc:publisher>Elsevier</dc:publisher>
20. <dc:source>Acta Materialia, Vol 57, Issue 10, pp 2879-2886 (2009)</dc:source>
21. <europeana:provider>Helvia (Universidad de Córdoba, Spain)</europeana:provider>
22. <europeana:type>TEXT</europeana:type>
23. <europeana:rights>https://creativecommons.org/licenses/by-nc-nd/4.0/</europeana:rights>
24. <europeana:dataProvider>Helvia (Universidad de Córdoba, Spain)</europeana:dataProvider>
25. <europeana:object>http://helvia.uco.es/xmlui/bitstream/10396/27139/1/8%20sapphire%20and%20rubies%20II.pdf</europeana:object>
26. <europeana:isShownAt>http://hdl.handle.net/10396/27139</europeana:isShownAt>
</europeana:record>