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Linked Open Data
1 eV GaAsSbN–based solar cells for efficient multi-junction design: Enhanced solar cell performance upon annealing
Identificadores del recurso
https://oa.upm.es/78251/
Procedencia
(Archivo Digital UPM)

Ficha

Título:
1 eV GaAsSbN–based solar cells for efficient multi-junction design: Enhanced solar cell performance upon annealing
Tema:
Electrónica
Física
Materiales
Descrición:
In this work, we demonstrate the beneficial effect of post-growth rapid thermal annealing (RTA) on the performance of ~1 eV GaAsSbN-based solar cells. Different configurations of the dilute nitride material are studied: a bulk quaternary GaAsSbN layer and type-II GaAsSb/GaAsN superlattices (SL) with different period thickness. The RTA treatment leads in both types of structures to an enhanced external quantum efficiency (EQE) and reduced values of the dark saturation current and series resistance. The origin of these improvements is attributed to reduced densities of N and Sb-rich clusters and point defects. Remarkably, all solar cell parameters are substantially improved, this being particularly significant for the short circuit current density (JSC) and power conversion efficiency (PCE), the latter with a relative enhancement as high as 500. The large increment of JSC is an important step towards current–matching in multi–junction solar cells containing GaAsSbN structures.
Fonte:
Solar Energy, ISSN 0038-092X, 2021, Vol. 221
Idioma:
English
Relación:
https://www.sciencedirect.com/science/article/pii/S0038092X21003285
info:eu-repo/grantAgreement/MINECO//MAT2016–77491–C2–1–R
info:eu-repo/grantAgreement/MINECO//ENE2017–89561–C4–2–R
info:eu-repo/grantAgreement/MINECO//PID2019-106088RB-C32
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.solener.2021.04.041
Autor/Productor:
Gonzalo Martin, Alicia
Stanojevic, Lazar
Fuertes Marrón, David
Guzman, A.
Hierro Cano, Adrián
Ulloa Herrero, José María
Editor:
E.T.S.I. Caminos, Canales y Puertos (UPM)
Dereitos:
https://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/openAccess
Data:
2021
Tipo de recurso:
info:eu-repo/semantics/article
Artículo
PeerReviewed
Formato:
application/pdf

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              5. <p>Con el fin de dar la máxima difusión a esta obra a través de internet, el autor cede a la Universidad Politécnica de Madrid, de forma gratuita y no exclusiva, por el máximo plazo legal y con ámbito universal, los derechos de reproducción, de distribución, de comunicación pública, incluido el derecho de puesta a disposición electrónica, para que pueda ser utilizada de forma libre y gratuita por todos los usuarios de internet, siempre que se cite su autoría y su uso se ajuste a las licencia Creative Commons elegida. Se entienden autorizados todos los actos necesarios para el registro de la obra, su seguridad y su conservación.</p>

              6. <p>El autor garantiza que el compromiso que aquí adquiere no infringe ningú n derecho de propiedad industrial, intelectual, derecho al honor, intimidad, o imagen, o cualquier otro derecho de terceros.</p>

              7. <p>El autor asume toda reclamación que pudiera ejercitarse contra la Universidad por terceros que vieran infringidos sus derechos a causa de la cesión.</p>

              8. <p>El autor renuncia a cualquier reclamación frente a la Universidad por las formas no ajustadas a la legislación vigente en que los usuarios hagan uso de las obras.</p>

              9. <p>

                1. <a href="mailto:archivo.digital@upm.es">archivo.digital@upm.es</a>

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                1. <strong>Para trabajos depositados por otros que no sean su autor:</strong>

                2. <strong>UPM</strong>

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      1. <bibo:abstract datatype="http://www.w3.org/2001/XMLSchema#string">In this work, we demonstrate the beneficial effect of post-growth rapid thermal annealing (RTA) on the performance of ~1 eV GaAsSbN-based solar cells. Different configurations of the dilute nitride material are studied: a bulk quaternary GaAsSbN layer and type-II GaAsSb/GaAsN superlattices (SL) with different period thickness. The RTA treatment leads in both types of structures to an enhanced external quantum efficiency (EQE) and reduced values of the dark saturation current and series resistance. The origin of these improvements is attributed to reduced densities of N and Sb-rich clusters and point defects. Remarkably, all solar cell parameters are substantially improved, this being particularly significant for the short circuit current density (JSC) and power conversion efficiency (PCE), the latter with a relative enhancement as high as 500. The large increment of JSC is an important step towards current–matching in multi–junction solar cells containing GaAsSbN structures.</bibo:abstract>

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