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β-Ga₂O₃ nanowires for an ultraviolet light selective frequency photodetector

Identificadores del recurso

https://eprints.ucm.es/45379/1/NogalesD%C3%ADazE%2010%20PREPRINT%20%2B%20EMBARGO%2015_10_2015.pdf

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Izenburu:: β-Ga₂O₃ nanowires for an ultraviolet light selective frequency photodetector
Tema:: Física de materiales; Física del estado sólido
Deskribapen:: The behaviour of ß-Ga₂O₃ nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium oxide substrates. Photocurrent measurements have been carried out on both undoped and Sn-doped Ga₂O₃ nanowires to evidence the influence of the dopant on the photodetector performances. The responsivity spectrum of single nanowires show maxima in the energy range 4.8-5.4 eV and a strong dependence on the pulse frequency of the excitation light has been observed for undoped nanowires. Our results show that the responsivity of beta- Ga₂O₃ nanowires can be controlled by tuning the chopper frequency of the excitation light and/ or by doping of the nanowires. Non-linear behavior in characteristic current-voltage curves has been observed for Ga₂O₃ : Sn nanowires. The mechanism leading to this behaviour has been discussed and related to space-charged-limited current effects. In addition, the responsivity achieved by doped nanowires at lower bias is higher than for undoped ones.
Idioma:
Harreman:: https://eprints.ucm.es/45379/; http://dx.doi.org/10.1088/0022-3727/47/41/415101; 10.1088/0022-3727/47/41/415101; MAT 2012-31959; 2009-00013
Autor/Productor:: López, I.; Castaldini, A.; Cavallini, A.; Nogales Díaz, Emilio; Méndez Martín, Bianchi; Piqueras de Noriega, Javier
Argitaratzaile:: Iop Publishing Ltd
Eskubideak:: info:eu-repo/semantics/openAccess
Data:: 2014-10-15
Tipo de recurso:: info:eu-repo/semantics/article; PeerReviewed
Formatu:: application/pdf

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2. <dc:title>β-Ga₂O₃ nanowires for an ultraviolet light selective frequency photodetector</dc:title>
3. <dc:creator>López, I.</dc:creator>
4. <dc:creator>Castaldini, A.</dc:creator>
5. <dc:creator>Cavallini, A.</dc:creator>
6. <dc:creator>Nogales Díaz, Emilio</dc:creator>
7. <dc:creator>Méndez Martín, Bianchi</dc:creator>
8. <dc:creator>Piqueras de Noriega, Javier</dc:creator>
9. <dc:subject>Física de materiales</dc:subject>
10. <dc:subject>Física del estado sólido</dc:subject>
11. <dc:description>The behaviour of ß-Ga₂O₃ nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium oxide substrates. Photocurrent measurements have been carried out on both undoped and Sn-doped Ga₂O₃ nanowires to evidence the influence of the dopant on the photodetector performances. The responsivity spectrum of single nanowires show maxima in the energy range 4.8-5.4 eV and a strong dependence on the pulse frequency of the excitation light has been observed for undoped nanowires. Our results show that the responsivity of beta- Ga₂O₃ nanowires can be controlled by tuning the chopper frequency of the excitation light and/ or by doping of the nanowires. Non-linear behavior in characteristic current-voltage curves has been observed for Ga₂O₃ : Sn nanowires. The mechanism leading to this behaviour has been discussed and related to space-charged-limited current effects. In addition, the responsivity achieved by doped nanowires at lower bias is higher than for undoped ones.</dc:description>
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