Fitxa

Izenburu:

β-Ga₂O₃ nanowires for an ultraviolet light selective frequency photodetector

Materia:

Física de materiales

Física del estado sólido

Deskribapen:

The behaviour of ß-Ga₂O₃ nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium oxide substrates. Photocurrent measurements have been carried out on both undoped and Sn-doped Ga₂O₃ nanowires to evidence the influence of the dopant on the photodetector performances. The responsivity spectrum of single nanowires show maxima in the energy range 4.8-5.4 eV and a strong dependence on the pulse frequency of the excitation light has been observed for undoped nanowires. Our results show that the responsivity of beta- Ga₂O₃ nanowires can be controlled by tuning the chopper frequency of the excitation light and/ or by doping of the nanowires. Non-linear behavior in characteristic current-voltage curves has been observed for Ga₂O₃ : Sn nanowires. The mechanism leading to this behaviour has been discussed and related to space-charged-limited current effects. In addition, the responsivity achieved by doped nanowires at lower bias is higher than for undoped ones.

Mintzaira:

en

Harreman:

https://eprints.ucm.es/45379/

http://dx.doi.org/10.1088/0022-3727/47/41/415101

10.1088/0022-3727/47/41/415101

MAT 2012-31959

2009-00013

Autor/Productor:

López, I.

Castaldini, A.

Cavallini, A.

Nogales Díaz, Emilio

Méndez Martín, Bianchi

Piqueras de Noriega, Javier

Argitaratzaile:

Iop Publishing Ltd

Eskubideak:

info:eu-repo/semantics/openAccess

Data:

2014-10-15

Baliabide-mota:

info:eu-repo/semantics/article

PeerReviewed

Formatu:

application/pdf

Identifikadore:

https://eprints.ucm.es/45379/1/NogalesD%C3%ADazE%2010%20PREPRINT%20%2B%20EMBARGO%2015_10_2015.pdf

oai_dc

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   2. <dc:title>β-Ga₂O₃ nanowires for an ultraviolet light selective frequency photodetector</dc:title>

   3. <dc:creator>López, I.</dc:creator>

   4. <dc:creator>Castaldini, A.</dc:creator>

   5. <dc:creator>Cavallini, A.</dc:creator>

   6. <dc:creator>Nogales Díaz, Emilio</dc:creator>

   7. <dc:creator>Méndez Martín, Bianchi</dc:creator>

   8. <dc:creator>Piqueras de Noriega, Javier</dc:creator>

   9. <dc:subject>Física de materiales</dc:subject>

   10. <dc:subject>Física del estado sólido</dc:subject>

   11. <dc:description>The behaviour of ß-Ga₂O₃ nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium oxide substrates. Photocurrent measurements have been carried out on both undoped and Sn-doped Ga₂O₃ nanowires to evidence the influence of the dopant on the photodetector performances. The responsivity spectrum of single nanowires show maxima in the energy range 4.8-5.4 eV and a strong dependence on the pulse frequency of the excitation light has been observed for undoped nanowires. Our results show that the responsivity of beta- Ga₂O₃ nanowires can be controlled by tuning the chopper frequency of the excitation light and/ or by doping of the nanowires. Non-linear behavior in characteristic current-voltage curves has been observed for Ga₂O₃ : Sn nanowires. The mechanism leading to this behaviour has been discussed and related to space-charged-limited current effects. In addition, the responsivity achieved by doped nanowires at lower bias is higher than for undoped ones.</dc:description>

   12. <dc:publisher>Iop Publishing Ltd</dc:publisher>

   13. <dc:date>2014-10-15</dc:date>

   14. <dc:type>info:eu-repo/semantics/article</dc:type>

   15. <dc:type>PeerReviewed</dc:type>

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   18. <dc:language>en</dc:language>

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   20. <dc:relation>http://dx.doi.org/10.1088/0022-3727/47/41/415101</dc:relation>

   21. <dc:relation>10.1088/0022-3727/47/41/415101</dc:relation>

   22. <dc:relation>MAT 2012-31959</dc:relation>

   23. <dc:relation>2009-00013</dc:relation>

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