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360 nW gate-driven ultra-low voltage CMOS linear transconductor with 1 MHz bandwidth and wide input range

Identificadores del recurso

H. D. Rico-Aniles, J. Ramirez-Angulo, A. J. Lopez-Martin and R. G. Carvajal, "360 nW Gate-Driven Ultra-Low Voltage CMOS Linear Transconductor With 1 MHz Bandwidth and Wide Input Range," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 67, no. 11, pp. 2332-2336, Nov. 2020, doi: 10.1109/TCSII.2020.2968246.

1549-7747 (Print)

https://hdl.handle.net/2454/39601

10.1109/TCSII.2020.2968246

Procedencia

(Academica-e: repositorio digital de la Universidad Pública de Navarra)

Ficha

Título:: 360 nW gate-driven ultra-low voltage CMOS linear transconductor with 1 MHz bandwidth and wide input range
Tema:: Analog integrated circuits; Low-power; Low voltage; Linear operational transconductance amplifier
Descripción:: A low voltage linear transconductor is introduced. The circuit is a pseudo differential architecture that operates with ±0.2V supplies and uses 900nA total biasing current. It employs a floating battery technique to achieve low voltage operation. The transconductor has a 1MHz bandwidth. It exhibits a SNR = 72dB, SFDR = 42dB and THD = 0.83% for a 100mVpp 10kHz sinusoidal input signal. Moreover, stability is not affected by the capacitance of the signal source. The circuit has been validated with a prototype chip fabricated in a 130nm CMOS technology.; This work was supported in part by the Agencia Estatal de Investigacion/Fondo Europeo de Desarrollo Regional under Grant TEC2016-80396-C2. The work of Hector D. Rico-Aniles was supported by the Mexican Consejo Nacional de Ciencia y Tecnologia for the through an Academic Scholarship under Grant 408946.
Idioma:: English
Relación:: IEEE Transactions on Circuits and Systems II: Express Briefs vol. 67, no. 11, November 2020; info:eu-repo/grantAgreement/ES/1PE/TEC2016-80396; https://doi.org/10.1109/TCSII.2020.2968246
Autor/Productor:: Rico-Aniles, Héctor Daniel; Ramírez-Angulo, Jaime; 0000-0001-7629-0305; González Carvajal, Ramón
Editor:: IEEE
Otros colaboradores/productores:: Universidad Pública de Navarra. Departamento de Ingeniería Eléctrica, Electrónica y de Comunicación; Universidad Pública de Navarra / Nafarroako Unibertsitate Publikoa. Institute of Smart Cities - ISC; Nafarroako Unibertsitate Publikoa. Ingeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritza Saila
Derechos:: © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.; Acceso abierto / Sarbide irekia; info:eu-repo/semantics/openAccess
Fecha:: 2020
Tipo de recurso:: info:eu-repo/semantics/article; info:eu-repo/semantics/acceptedVersion
Formato:: application/pdf

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