Ficha
- Título:
- 4H-SiC Integrated circuits for high temperature and harsh environment applications
- Tema:
- 620
- 621.3
- Descripción:
- Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.
- Fuente:
- TDX (Tesis Doctorals en Xarxa)
- Idioma:
- English
- Autor/Productor:
- Alexandru, Mihaela
- Editor:
- Universitat Politècnica de Catalunya
- Otros colaboradores/productores:
- Godignon, Philippe
- Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
- Derechos:
- L'accés als continguts d'aquesta tesi queda condicionat a l'acceptació de les condicions d'ús establertes per la següent llicència Creative Commons: http://creativecommons.org/licenses/by-nc-sa/3.0/es/
- http://creativecommons.org/licenses/by-nc-sa/3.0/es/
- info:eu-repo/semantics/openAccess
- Fecha:
- 2014-02-04T11:16:42Z
- 2013-09-10
- Tipo de recurso:
- info:eu-repo/semantics/doctoralThesis
- info:eu-repo/semantics/publishedVersion
- Formato:
- 186 p.
- application/pdf
oai_dc
<oai_dc:dc schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
<dc:title>4H-SiC Integrated circuits for high temperature and harsh environment applications</dc:title>
<dc:creator>Alexandru, Mihaela</dc:creator>
<dc:contributor>Godignon, Philippe</dc:contributor>
<dc:contributor>Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica</dc:contributor>
<dc:subject>620</dc:subject>
<dc:subject>621.3</dc:subject>
<dc:description>Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</dc:description>
<dc:date>2014-02-04T11:16:42Z</dc:date>
<dc:date>2014-02-04T11:16:42Z</dc:date>
<dc:date>2013-09-10</dc:date>
<dc:type>info:eu-repo/semantics/doctoralThesis</dc:type>
<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
<dc:identifier>http://hdl.handle.net/10803/129635</dc:identifier>
<dc:identifier>B 5011-2014</dc:identifier>
<dc:language>eng</dc:language>
<dc:rights>L'accés als continguts d'aquesta tesi queda condicionat a l'acceptació de les condicions d'ús establertes per la següent llicència Creative Commons: http://creativecommons.org/licenses/by-nc-sa/3.0/es/</dc:rights>
<dc:rights>http://creativecommons.org/licenses/by-nc-sa/3.0/es/</dc:rights>
<dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
<dc:format>186 p.</dc:format>
<dc:format>application/pdf</dc:format>
<dc:format>application/pdf</dc:format>
<dc:publisher>Universitat Politècnica de Catalunya</dc:publisher>
<dc:source>TDX (Tesis Doctorals en Xarxa)</dc:source>
</oai_dc:dc>
<?xml version="1.0" encoding="UTF-8" ?>
dim
<dim:dim schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
<dim:field element="contributor" mdschema="dc">Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica</dim:field>
<dim:field authority="27aaa2a5-a815-4580-b0cc-8838561e99d5" confidence="-1" element="contributor" mdschema="dc" qualifier="author">Alexandru, Mihaela</dim:field>
<dim:field element="contributor" mdschema="dc" qualifier="authoremail">mihaela.alexandru@imb-cnm.csic.es</dim:field>
<dim:field element="contributor" mdschema="dc" qualifier="authoremailshow">false</dim:field>
<dim:field authority="1483586f-2196-423c-8b2a-61e513b2b55d" confidence="-1" element="contributor" mdschema="dc" qualifier="director">Godignon, Philippe</dim:field>
<dim:field element="contributor" mdschema="dc" qualifier="authorsendemail">true</dim:field>
<dim:field element="date" mdschema="dc" qualifier="accessioned">2014-02-04T11:16:42Z</dim:field>
<dim:field element="date" mdschema="dc" qualifier="available">2014-02-04T11:16:42Z</dim:field>
<dim:field element="date" mdschema="dc" qualifier="issued">2013-09-10</dim:field>
<dim:field element="identifier" mdschema="dc" qualifier="uri">http://hdl.handle.net/10803/129635</dim:field>
<dim:field element="identifier" mdschema="dc" qualifier="dl">B 5011-2014</dim:field>
<dim:field element="description" lang="eng" mdschema="dc" qualifier="abstract">Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</dim:field>
<dim:field element="format" mdschema="dc" qualifier="extent">186 p.</dim:field>
<dim:field element="format" mdschema="dc" qualifier="mimetype">application/pdf</dim:field>
<dim:field element="language" mdschema="dc" qualifier="iso">eng</dim:field>
<dim:field element="publisher" mdschema="dc">Universitat Politècnica de Catalunya</dim:field>
<dim:field element="rights" mdschema="dc" qualifier="license">L'accés als continguts d'aquesta tesi queda condicionat a l'acceptació de les condicions d'ús establertes per la següent llicència Creative Commons: http://creativecommons.org/licenses/by-nc-sa/3.0/es/</dim:field>
<dim:field element="rights" lang="*" mdschema="dc" qualifier="uri">http://creativecommons.org/licenses/by-nc-sa/3.0/es/</dim:field>
<dim:field element="rights" mdschema="dc" qualifier="accessLevel">info:eu-repo/semantics/openAccess</dim:field>
<dim:field element="source" mdschema="dc">TDX (Tesis Doctorals en Xarxa)</dim:field>
<dim:field element="title" mdschema="dc">4H-SiC Integrated circuits for high temperature and harsh environment applications</dim:field>
<dim:field element="type" mdschema="dc">info:eu-repo/semantics/doctoralThesis</dim:field>
<dim:field element="type" mdschema="dc">info:eu-repo/semantics/publishedVersion</dim:field>
<dim:field element="subject" lang="cat" mdschema="dc" qualifier="udc">620</dim:field>
<dim:field element="subject" lang="cat" mdschema="dc" qualifier="udc">621.3</dim:field>
<dim:field element="embargo" mdschema="dc" qualifier="terms">cap</dim:field>
</dim:dim>
<?xml version="1.0" encoding="UTF-8" ?>
etdms
<thesis schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.0/ http://www.ndltd.org/standards/metadata/etdms/1.0/etdms.xsd">
<title>4H-SiC Integrated circuits for high temperature and harsh environment applications</title>
<creator>Alexandru, Mihaela</creator>
<contributor>mihaela.alexandru@imb-cnm.csic.es</contributor>
<contributor>false</contributor>
<contributor>Godignon, Philippe</contributor>
<contributor>true</contributor>
<description>Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</description>
<date>2014-02-04</date>
<date>2014-02-04</date>
<date>2013-09-10</date>
<type>info:eu-repo/semantics/doctoralThesis</type>
<type>info:eu-repo/semantics/publishedVersion</type>
<identifier>http://hdl.handle.net/10803/129635</identifier>
<identifier>B 5011-2014</identifier>
<language>eng</language>
<rights>L'accés als continguts d'aquesta tesi queda condicionat a l'acceptació de les condicions d'ús establertes per la següent llicència Creative Commons: http://creativecommons.org/licenses/by-nc-sa/3.0/es/</rights>
<rights>http://creativecommons.org/licenses/by-nc-sa/3.0/es/</rights>
<rights>info:eu-repo/semantics/openAccess</rights>
<publisher>Universitat Politècnica de Catalunya</publisher>
<source>TDX (Tesis Doctorals en Xarxa)</source>
</thesis>
<?xml version="1.0" encoding="UTF-8" ?>
marc
<record schemaLocation="http://www.loc.gov/MARC21/slim http://www.loc.gov/standards/marcxml/schema/MARC21slim.xsd">
<leader>00925njm 22002777a 4500</leader>
<datafield ind1=" " ind2=" " tag="042">
<subfield code="a">dc</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="720">
<subfield code="a">Alexandru, Mihaela</subfield>
<subfield code="e">author</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="260">
<subfield code="c">2013-09-10</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="520">
<subfield code="a">Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</subfield>
</datafield>
<datafield ind1="8" ind2=" " tag="024">
<subfield code="a">http://hdl.handle.net/10803/129635</subfield>
</datafield>
<datafield ind1="8" ind2=" " tag="024">
<subfield code="a">B 5011-2014</subfield>
</datafield>
<datafield ind1="0" ind2="0" tag="245">
<subfield code="a">4H-SiC Integrated circuits for high temperature and harsh environment applications</subfield>
</datafield>
</record>
<?xml version="1.0" encoding="UTF-8" ?>
marc_ccuc
<record schemaLocation="http://www.loc.gov/MARC21/slim http://www.loc.gov/standards/marcxml/schema/MARC21slim.xsd">
<leader>nam a 5i 4500</leader>
<datafield ind1="1" ind2="0" tag="245">
<subfield code="a">4H-SiC Integrated circuits for high temperature and harsh environment applications</subfield>
</datafield>
<datafield ind1=" " ind2="1" tag="264">
<subfield code="a">[Barcelona] :</subfield>
<subfield code="b">Universitat Politècnica de Catalunya,</subfield>
<subfield code="c">2014</subfield>
</datafield>
<datafield ind1="4" ind2="0" tag="856">
<subfield code="z">Accés lliure</subfield>
<subfield code="u">http://hdl.handle.net/10803/129635</subfield>
</datafield>
<controlfield tag="007">cr |||||||||||</controlfield>
<controlfield tag="008">AAMMDDs2014 sp ||||fsm||||0|| 0 eng|c</controlfield>
<datafield ind1="1" ind2=" " tag="100">
<subfield code="a">Alexandru, Mihaela,</subfield>
<subfield code="e">autor</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="300">
<subfield code="a">1 recurs en línia (186 pàgines)</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="502">
<subfield code="g">Tesi</subfield>
<subfield code="b">Doctorat</subfield>
<subfield code="c">Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica</subfield>
<subfield code="d">2013</subfield>
</datafield>
<datafield ind1="2" ind2=" " tag="710">
<subfield code="a">Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica</subfield>
</datafield>
<datafield ind1=" " ind2="4" tag="655">
<subfield code="a">Tesis i dissertacions electròniques</subfield>
</datafield>
<datafield ind1="1" ind2=" " tag="700">
<subfield code="a">Godignon, Philippe,</subfield>
<subfield code="e">supervisor acadèmic</subfield>
</datafield>
<datafield ind1="0" ind2=" " tag="730">
<subfield code="a">TDX</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="520">
<subfield code="a">Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="998">
<subfield code="a">p</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="040">
<subfield code="a">ES-BaCBU</subfield>
<subfield code="b">cat</subfield>
<subfield code="e">rda</subfield>
<subfield code="c">ES-BaCBU</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="336">
<subfield code="a">text</subfield>
<subfield code="b">txt</subfield>
<subfield code="2">rdacontent</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="337">
<subfield code="a">informàtic</subfield>
<subfield code="b">c</subfield>
<subfield code="2">rdamedia</subfield>
</datafield>
<datafield ind1=" " ind2=" " tag="338">
<subfield code="a">recurs en línia</subfield>
<subfield code="b">cr</subfield>
<subfield code="2">rdacarrier</subfield>
</datafield>
</record>
<?xml version="1.0" encoding="UTF-8" ?>
mets
<mets ID=" DSpace_ITEM_10803-129635" OBJID=" hdl:10803/129635" PROFILE="DSpace METS SIP Profile 1.0" TYPE="DSpace ITEM" schemaLocation="http://www.loc.gov/METS/ http://www.loc.gov/standards/mets/mets.xsd">
<metsHdr CREATEDATE="2024-10-03T10:33:09Z">
<agent ROLE="CUSTODIAN" TYPE="ORGANIZATION">
<name>TDX (Tesis Doctorals en Xarxa)</name>
</agent>
</metsHdr>
<dmdSec ID="DMD_10803_129635">
<mdWrap MDTYPE="MODS">
<xmlData schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-1.xsd">
<mods:mods schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-1.xsd">
<mods:name>
<mods:role>
<mods:roleTerm type="text">author</mods:roleTerm>
</mods:role>
<mods:namePart>Alexandru, Mihaela</mods:namePart>
</mods:name>
<mods:name>
<mods:role>
<mods:roleTerm type="text">authoremail</mods:roleTerm>
</mods:role>
<mods:namePart>mihaela.alexandru@imb-cnm.csic.es</mods:namePart>
</mods:name>
<mods:name>
<mods:role>
<mods:roleTerm type="text">authoremailshow</mods:roleTerm>
</mods:role>
<mods:namePart>false</mods:namePart>
</mods:name>
<mods:name>
<mods:role>
<mods:roleTerm type="text">director</mods:roleTerm>
</mods:role>
<mods:namePart>Godignon, Philippe</mods:namePart>
</mods:name>
<mods:name>
<mods:role>
<mods:roleTerm type="text">authorsendemail</mods:roleTerm>
</mods:role>
<mods:namePart>true</mods:namePart>
</mods:name>
<mods:extension>
<mods:dateAccessioned encoding="iso8601">2014-02-04T11:16:42Z</mods:dateAccessioned>
</mods:extension>
<mods:extension>
<mods:dateAvailable encoding="iso8601">2014-02-04T11:16:42Z</mods:dateAvailable>
</mods:extension>
<mods:originInfo>
<mods:dateIssued encoding="iso8601">2013-09-10</mods:dateIssued>
</mods:originInfo>
<mods:identifier type="uri">http://hdl.handle.net/10803/129635</mods:identifier>
<mods:identifier type="dl">B 5011-2014</mods:identifier>
<mods:abstract>Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</mods:abstract>
<mods:language>
<mods:languageTerm authority="rfc3066">eng</mods:languageTerm>
</mods:language>
- <mods:accessCondition type="useAndReproduction" />
<mods:titleInfo>
<mods:title>4H-SiC Integrated circuits for high temperature and harsh environment applications</mods:title>
</mods:titleInfo>
<mods:genre>info:eu-repo/semantics/doctoralThesis info:eu-repo/semantics/publishedVersion</mods:genre>
</mods:mods>
</xmlData>
</mdWrap>
</dmdSec>
<amdSec ID="FO_10803_129635_1">
<techMD ID="TECH_O_10803_129635_1">
<mdWrap MDTYPE="PREMIS">
<xmlData schemaLocation="http://www.loc.gov/standards/premis http://www.loc.gov/standards/premis/PREMIS-v1-0.xsd">
<premis:premis>
<premis:object>
<premis:objectIdentifier>
<premis:objectIdentifierType>URL</premis:objectIdentifierType>
<premis:objectIdentifierValue>https://www.tdx.cat/bitstream/10803/129635/1/TMA1de1.pdf</premis:objectIdentifierValue>
</premis:objectIdentifier>
<premis:objectCategory>File</premis:objectCategory>
<premis:objectCharacteristics>
<premis:fixity>
<premis:messageDigestAlgorithm>MD5</premis:messageDigestAlgorithm>
<premis:messageDigest>720cbf7298ba8a9863d9c427be5a0b2d</premis:messageDigest>
</premis:fixity>
<premis:size>5792203</premis:size>
<premis:format>
<premis:formatDesignation>
<premis:formatName>application/pdf</premis:formatName>
</premis:formatDesignation>
</premis:format>
</premis:objectCharacteristics>
<premis:originalName>TMA1de1.pdf</premis:originalName>
</premis:object>
</premis:premis>
</xmlData>
</mdWrap>
</techMD>
</amdSec>
<amdSec ID="FT_10803_129635_5">
<techMD ID="TECH_T_10803_129635_5">
<mdWrap MDTYPE="PREMIS">
<xmlData schemaLocation="http://www.loc.gov/standards/premis http://www.loc.gov/standards/premis/PREMIS-v1-0.xsd">
<premis:premis>
<premis:object>
<premis:objectIdentifier>
<premis:objectIdentifierType>URL</premis:objectIdentifierType>
<premis:objectIdentifierValue>https://www.tdx.cat/bitstream/10803/129635/5/TMA1de1.pdf.txt</premis:objectIdentifierValue>
</premis:objectIdentifier>
<premis:objectCategory>File</premis:objectCategory>
<premis:objectCharacteristics>
<premis:fixity>
<premis:messageDigestAlgorithm>MD5</premis:messageDigestAlgorithm>
<premis:messageDigest>83e99f7e221b865c2d9a339620cf9d60</premis:messageDigest>
</premis:fixity>
<premis:size>319616</premis:size>
<premis:format>
<premis:formatDesignation>
<premis:formatName>text/plain</premis:formatName>
</premis:formatDesignation>
</premis:format>
</premis:objectCharacteristics>
<premis:originalName>TMA1de1.pdf.txt</premis:originalName>
</premis:object>
</premis:premis>
</xmlData>
</mdWrap>
</techMD>
</amdSec>
<fileSec>
<fileGrp USE="ORIGINAL">
<file ADMID="FO_10803_129635_1" CHECKSUM="720cbf7298ba8a9863d9c427be5a0b2d" CHECKSUMTYPE="MD5" GROUPID="GROUP_BITSTREAM_10803_129635_1" ID="BITSTREAM_ORIGINAL_10803_129635_1" MIMETYPE="application/pdf" SEQ="1" SIZE="5792203">
- <FLocat LOCTYPE="URL" href="https://www.tdx.cat/bitstream/10803/129635/1/TMA1de1.pdf" type="simple" />
</file>
</fileGrp>
<fileGrp USE="TEXT">
<file ADMID="FT_10803_129635_5" CHECKSUM="83e99f7e221b865c2d9a339620cf9d60" CHECKSUMTYPE="MD5" GROUPID="GROUP_BITSTREAM_10803_129635_5" ID="BITSTREAM_TEXT_10803_129635_5" MIMETYPE="text/plain" SEQ="5" SIZE="319616">
- <FLocat LOCTYPE="URL" href="https://www.tdx.cat/bitstream/10803/129635/5/TMA1de1.pdf.txt" type="simple" />
</file>
</fileGrp>
</fileSec>
<structMap LABEL="DSpace Object" TYPE="LOGICAL">
<div ADMID="DMD_10803_129635" TYPE="DSpace Object Contents">
<div TYPE="DSpace BITSTREAM">
- <fptr FILEID="BITSTREAM_ORIGINAL_10803_129635_1" />
</div>
</div>
</structMap>
</mets>
<?xml version="1.0" encoding="UTF-8" ?>
mods
<mods:mods schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-1.xsd">
<mods:name>
<mods:namePart>Alexandru, Mihaela</mods:namePart>
</mods:name>
<mods:extension>
<mods:dateAvailable encoding="iso8601">2014-02-04T11:16:42Z</mods:dateAvailable>
</mods:extension>
<mods:extension>
<mods:dateAccessioned encoding="iso8601">2014-02-04T11:16:42Z</mods:dateAccessioned>
</mods:extension>
<mods:originInfo>
<mods:dateIssued encoding="iso8601">2013-09-10</mods:dateIssued>
</mods:originInfo>
<mods:identifier type="uri">http://hdl.handle.net/10803/129635</mods:identifier>
<mods:identifier type="dl">B 5011-2014</mods:identifier>
<mods:abstract>Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</mods:abstract>
<mods:language>
<mods:languageTerm>eng</mods:languageTerm>
</mods:language>
<mods:accessCondition type="useAndReproduction">L'accés als continguts d'aquesta tesi queda condicionat a l'acceptació de les condicions d'ús establertes per la següent llicència Creative Commons: http://creativecommons.org/licenses/by-nc-sa/3.0/es/</mods:accessCondition>
<mods:accessCondition type="useAndReproduction">http://creativecommons.org/licenses/by-nc-sa/3.0/es/</mods:accessCondition>
<mods:accessCondition type="useAndReproduction">info:eu-repo/semantics/openAccess</mods:accessCondition>
<mods:titleInfo>
<mods:title>4H-SiC Integrated circuits for high temperature and harsh environment applications</mods:title>
</mods:titleInfo>
<mods:genre>info:eu-repo/semantics/doctoralThesis</mods:genre>
<mods:genre>info:eu-repo/semantics/publishedVersion</mods:genre>
</mods:mods>
<?xml version="1.0" encoding="UTF-8" ?>
oaire
<oaire:record schemaLocation="http://namespaceopenaire.eu/schema/oaire/">
<dc:title>4H-SiC Integrated circuits for high temperature and harsh environment applications</dc:title>
<datacite:creator>
<datacite:creatorName>Alexandru, Mihaela</datacite:creatorName>
</datacite:creator>
<datacite:contributor>mihaela.alexandru@imb-cnm.csic.es</datacite:contributor>
<datacite:contributor>false</datacite:contributor>
<datacite:contributor>Godignon, Philippe</datacite:contributor>
<datacite:contributor>true</datacite:contributor>
<datacite:contributor>Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica</datacite:contributor>
<dc:subject>620</dc:subject>
<dc:subject>621.3</dc:subject>
<dc:description>Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</dc:description>
<dc:date>2014-02-04T11:16:42Z</dc:date>
<dc:date>2014-02-04T11:16:42Z</dc:date>
<dc:date>2013-09-10</dc:date>
<dc:type>info:eu-repo/semantics/doctoralThesis</dc:type>
<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
<datacite:alternateIdentifier>http://hdl.handle.net/10803/129635</datacite:alternateIdentifier>
<datacite:alternateIdentifier>B 5011-2014</datacite:alternateIdentifier>
<dc:language>eng</dc:language>
<dc:rights>L'accés als continguts d'aquesta tesi queda condicionat a l'acceptació de les condicions d'ús establertes per la següent llicència Creative Commons: http://creativecommons.org/licenses/by-nc-sa/3.0/es/</dc:rights>
<dc:rights>http://creativecommons.org/licenses/by-nc-sa/3.0/es/</dc:rights>
<dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
<dc:format>186 p.</dc:format>
<dc:format>application/pdf</dc:format>
<dc:format>application/pdf</dc:format>
<dc:publisher>Universitat Politècnica de Catalunya</dc:publisher>
<dc:source>TDX (Tesis Doctorals en Xarxa)</dc:source>
<oaire:file>https://www.tdx.cat/bitstream/10803/129635/1/TMA1de1.pdf</oaire:file>
</oaire:record>
<?xml version="1.0" encoding="UTF-8" ?>
ore
<atom:entry schemaLocation="http://www.w3.org/2005/Atom http://www.kbcafe.com/rss/atom.xsd.xml">
<atom:id>http://hdl.handle.net/10803/129635/ore.xml</atom:id>
- <atom:link href="http://hdl.handle.net/10803/129635" rel="alternate" />
- <atom:link href="http://hdl.handle.net/10803/129635/ore.xml" rel="http://www.openarchives.org/ore/terms/describes" />
- <atom:link href="http://hdl.handle.net/10803/129635/ore.xml#atom" rel="self" type="application/atom+xml" />
<atom:published>2014-02-04T11:16:42Z</atom:published>
<atom:updated>2014-02-04T11:16:42Z</atom:updated>
<atom:source>
<atom:generator>TDX (Tesis Doctorals en Xarxa)</atom:generator>
</atom:source>
<atom:title>4H-SiC Integrated circuits for high temperature and harsh environment applications</atom:title>
<atom:author>
<atom:name>Alexandru, Mihaela</atom:name>
</atom:author>
- <atom:category label="Aggregation" scheme="http://www.openarchives.org/ore/terms/" term="http://www.openarchives.org/ore/terms/Aggregation" />
- <atom:category scheme="http://www.openarchives.org/ore/atom/modified" term="2014-02-04T11:16:42Z" />
- <atom:category label="DSpace Item" scheme="http://www.dspace.org/objectModel/" term="DSpaceItem" />
- <atom:link href="https://www.tdx.cat/bitstream/10803/129635/1/TMA1de1.pdf" length="5792203" rel="http://www.openarchives.org/ore/terms/aggregates" title="TMA1de1.pdf" type="application/pdf" />
<oreatom:triples>
<rdf:Description about="http://hdl.handle.net/10803/129635/ore.xml#atom">
- <rdf:type resource="http://www.dspace.org/objectModel/DSpaceItem" />
<dcterms:modified>2014-02-04T11:16:42Z</dcterms:modified>
</rdf:Description>
<rdf:Description about="https://www.tdx.cat/bitstream/10803/129635/1/TMA1de1.pdf">
- <rdf:type resource="http://www.dspace.org/objectModel/DSpaceBitstream" />
<dcterms:description>ORIGINAL</dcterms:description>
</rdf:Description>
<rdf:Description about="https://www.tdx.cat/bitstream/10803/129635/2/license_url">
- <rdf:type resource="http://www.dspace.org/objectModel/DSpaceBitstream" />
<dcterms:description>CC-LICENSE</dcterms:description>
</rdf:Description>
<rdf:Description about="https://www.tdx.cat/bitstream/10803/129635/3/license_text">
- <rdf:type resource="http://www.dspace.org/objectModel/DSpaceBitstream" />
<dcterms:description>CC-LICENSE</dcterms:description>
</rdf:Description>
<rdf:Description about="https://www.tdx.cat/bitstream/10803/129635/4/license_rdf">
- <rdf:type resource="http://www.dspace.org/objectModel/DSpaceBitstream" />
<dcterms:description>CC-LICENSE</dcterms:description>
</rdf:Description>
<rdf:Description about="https://www.tdx.cat/bitstream/10803/129635/5/TMA1de1.pdf.txt">
- <rdf:type resource="http://www.dspace.org/objectModel/DSpaceBitstream" />
<dcterms:description>TEXT</dcterms:description>
</rdf:Description>
<rdf:Description about="https://www.tdx.cat/bitstream/10803/129635/6/TMA1de1.pdf.xml">
- <rdf:type resource="http://www.dspace.org/objectModel/DSpaceBitstream" />
<dcterms:description>MEDIA_DOCUMENT</dcterms:description>
</rdf:Description>
</oreatom:triples>
</atom:entry>
<?xml version="1.0" encoding="UTF-8" ?>
qdc
<qdc:qualifieddc schemaLocation="http://purl.org/dc/elements/1.1/ http://dublincore.org/schemas/xmls/qdc/2006/01/06/dc.xsd http://purl.org/dc/terms/ http://dublincore.org/schemas/xmls/qdc/2006/01/06/dcterms.xsd http://dspace.org/qualifieddc/ http://www.ukoln.ac.uk/metadata/dcmi/xmlschema/qualifieddc.xsd">
<dc:title>4H-SiC Integrated circuits for high temperature and harsh environment applications</dc:title>
<dc:creator>Alexandru, Mihaela</dc:creator>
<dc:contributor>Godignon, Philippe</dc:contributor>
<dcterms:abstract>Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</dcterms:abstract>
<dcterms:dateAccepted>2014-02-04T11:16:42Z</dcterms:dateAccepted>
<dcterms:available>2014-02-04T11:16:42Z</dcterms:available>
<dcterms:created>2014-02-04T11:16:42Z</dcterms:created>
<dcterms:issued>2013-09-10</dcterms:issued>
<dc:type>info:eu-repo/semantics/doctoralThesis</dc:type>
<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
<dc:identifier>http://hdl.handle.net/10803/129635</dc:identifier>
<dc:identifier>B 5011-2014</dc:identifier>
<dc:language>eng</dc:language>
<dc:rights>L'accés als continguts d'aquesta tesi queda condicionat a l'acceptació de les condicions d'ús establertes per la següent llicència Creative Commons: http://creativecommons.org/licenses/by-nc-sa/3.0/es/</dc:rights>
<dc:rights>http://creativecommons.org/licenses/by-nc-sa/3.0/es/</dc:rights>
<dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
<dc:publisher>Universitat Politècnica de Catalunya</dc:publisher>
<dc:source>TDX (Tesis Doctorals en Xarxa)</dc:source>
</qdc:qualifieddc>
<?xml version="1.0" encoding="UTF-8" ?>
rdf
<rdf:RDF schemaLocation="http://www.openarchives.org/OAI/2.0/rdf/ http://www.openarchives.org/OAI/2.0/rdf.xsd">
<ow:Publication about="oai:www.tdx.cat:10803/129635">
<dc:title>4H-SiC Integrated circuits for high temperature and harsh environment applications</dc:title>
<dc:creator>Alexandru, Mihaela</dc:creator>
<dc:contributor>mihaela.alexandru@imb-cnm.csic.es</dc:contributor>
<dc:contributor>false</dc:contributor>
<dc:contributor>Godignon, Philippe</dc:contributor>
<dc:contributor>true</dc:contributor>
<dc:description>Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</dc:description>
<dc:date>2014-02-04T11:16:42Z</dc:date>
<dc:date>2014-02-04T11:16:42Z</dc:date>
<dc:date>2013-09-10</dc:date>
<dc:type>info:eu-repo/semantics/doctoralThesis</dc:type>
<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
<dc:identifier>http://hdl.handle.net/10803/129635</dc:identifier>
<dc:identifier>B 5011-2014</dc:identifier>
<dc:language>eng</dc:language>
<dc:rights>L'accés als continguts d'aquesta tesi queda condicionat a l'acceptació de les condicions d'ús establertes per la següent llicència Creative Commons: http://creativecommons.org/licenses/by-nc-sa/3.0/es/</dc:rights>
<dc:rights>http://creativecommons.org/licenses/by-nc-sa/3.0/es/</dc:rights>
<dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
<dc:publisher>Universitat Politècnica de Catalunya</dc:publisher>
<dc:source>TDX (Tesis Doctorals en Xarxa)</dc:source>
</ow:Publication>
</rdf:RDF>
<?xml version="1.0" encoding="UTF-8" ?>
uketd_dc
<uketd_dc:uketddc schemaLocation="http://naca.central.cranfield.ac.uk/ethos-oai/2.0/ http://naca.central.cranfield.ac.uk/ethos-oai/2.0/uketd_dc.xsd">
<dc:title>4H-SiC Integrated circuits for high temperature and harsh environment applications</dc:title>
<dc:creator>Alexandru, Mihaela</dc:creator>
<dcterms:abstract>Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</dcterms:abstract>
<uketdterms:institution>Universitat Politècnica de Catalunya</uketdterms:institution>
<dcterms:issued>2013-09-10</dcterms:issued>
<dc:type>info:eu-repo/semantics/doctoralThesis</dc:type>
<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
<dc:language type="dcterms:ISO639-2">eng</dc:language>
<dcterms:isReferencedBy>http://hdl.handle.net/10803/129635</dcterms:isReferencedBy>
<dc:identifier type="dcterms:URI">https://www.tdx.cat/bitstream/10803/129635/1/TMA1de1.pdf</dc:identifier>
<uketdterms:checksum type="uketdterms:MD5">720cbf7298ba8a9863d9c427be5a0b2d</uketdterms:checksum>
<dcterms:hasFormat>https://www.tdx.cat/bitstream/10803/129635/5/TMA1de1.pdf.txt</dcterms:hasFormat>
<uketdterms:checksum type="uketdterms:MD5">83e99f7e221b865c2d9a339620cf9d60</uketdterms:checksum>
<uketdterms:embargodate>cap</uketdterms:embargodate>
</uketd_dc:uketddc>
<?xml version="1.0" encoding="UTF-8" ?>
xoai
<metadata schemaLocation="http://www.lyncode.com/xoai http://www.lyncode.com/xsd/xoai.xsd">
<element name="dc">
<element name="contributor">
<element name="none">
<field name="value">Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica</field>
</element>
<element name="author">
<element name="none">
<field name="value">Alexandru, Mihaela</field>
<field name="authority">27aaa2a5-a815-4580-b0cc-8838561e99d5</field>
<field name="confidence">-1</field>
</element>
</element>
<element name="authoremail">
<element name="none">
<field name="value">mihaela.alexandru@imb-cnm.csic.es</field>
</element>
</element>
<element name="authoremailshow">
<element name="none">
<field name="value">false</field>
</element>
</element>
<element name="director">
<element name="none">
<field name="value">Godignon, Philippe</field>
<field name="authority">1483586f-2196-423c-8b2a-61e513b2b55d</field>
<field name="confidence">-1</field>
</element>
</element>
<element name="authorsendemail">
<element name="none">
<field name="value">true</field>
</element>
</element>
</element>
<element name="date">
<element name="accessioned">
<element name="none">
<field name="value">2014-02-04T11:16:42Z</field>
</element>
</element>
<element name="available">
<element name="none">
<field name="value">2014-02-04T11:16:42Z</field>
</element>
</element>
<element name="issued">
<element name="none">
<field name="value">2013-09-10</field>
</element>
</element>
</element>
<element name="identifier">
<element name="uri">
<element name="none">
<field name="value">http://hdl.handle.net/10803/129635</field>
</element>
</element>
<element name="dl">
<element name="none">
<field name="value">B 5011-2014</field>
</element>
</element>
</element>
<element name="description">
<element name="abstract">
<element name="eng">
<field name="value">Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.</field>
</element>
</element>
</element>
<element name="format">
<element name="extent">
<element name="none">
<field name="value">186 p.</field>
</element>
</element>
<element name="mimetype">
<element name="none">
<field name="value">application/pdf</field>
</element>
</element>
</element>
<element name="language">
<element name="iso">
<element name="none">
<field name="value">eng</field>
</element>
</element>
</element>
<element name="publisher">
<element name="none">
<field name="value">Universitat Politècnica de Catalunya</field>
</element>
</element>
<element name="rights">
<element name="license">
<element name="none">
<field name="value">L'accés als continguts d'aquesta tesi queda condicionat a l'acceptació de les condicions d'ús establertes per la següent llicència Creative Commons: http://creativecommons.org/licenses/by-nc-sa/3.0/es/</field>
</element>
</element>
<element name="uri">
<element name="*">
<field name="value">http://creativecommons.org/licenses/by-nc-sa/3.0/es/</field>
</element>
</element>
<element name="accessLevel">
<element name="none">
<field name="value">info:eu-repo/semantics/openAccess</field>
</element>
</element>
</element>
<element name="source">
<element name="none">
<field name="value">TDX (Tesis Doctorals en Xarxa)</field>
</element>
</element>
<element name="title">
<element name="none">
<field name="value">4H-SiC Integrated circuits for high temperature and harsh environment applications</field>
</element>
</element>
<element name="type">
<element name="none">
<field name="value">info:eu-repo/semantics/doctoralThesis</field>
<field name="value">info:eu-repo/semantics/publishedVersion</field>
</element>
</element>
<element name="subject">
<element name="udc">
<element name="cat">
<field name="value">620</field>
<field name="value">621.3</field>
</element>
</element>
</element>
<element name="embargo">
<element name="terms">
<element name="none">
<field name="value">cap</field>
</element>
</element>
</element>
</element>
<element name="bundles">
<element name="bundle">
<field name="name">ORIGINAL</field>
<element name="bitstreams">
<element name="bitstream">
<field name="name">TMA1de1.pdf</field>
<field name="originalName">TMA1de1.pdf</field>
<field name="format">application/pdf</field>
<field name="size">5792203</field>
<field name="url">https://www.tdx.cat/bitstream/10803/129635/1/TMA1de1.pdf</field>
<field name="checksum">720cbf7298ba8a9863d9c427be5a0b2d</field>
<field name="checksumAlgorithm">MD5</field>
<field name="sid">1</field>
<field name="drm">open access</field>
</element>
</element>
</element>
<element name="bundle">
<field name="name">CC-LICENSE</field>
<element name="bitstreams">
<element name="bitstream">
<field name="name">license_url</field>
<field name="originalName">license_url</field>
<field name="format">text/plain; charset=utf-8</field>
<field name="size">52</field>
<field name="url">https://www.tdx.cat/bitstream/10803/129635/2/license_url</field>
<field name="checksum">9ebbf7798ba37e6b98536059ad9162ae</field>
<field name="checksumAlgorithm">MD5</field>
<field name="sid">2</field>
<field name="drm">open access</field>
</element>
<element name="bitstream">
<field name="name">license_text</field>
<field name="originalName">license_text</field>
<field name="format">text/html; charset=utf-8</field>
<field name="size">0</field>
<field name="url">https://www.tdx.cat/bitstream/10803/129635/3/license_text</field>
<field name="checksum">d41d8cd98f00b204e9800998ecf8427e</field>
<field name="checksumAlgorithm">MD5</field>
<field name="sid">3</field>
<field name="drm">open access</field>
</element>
<element name="bitstream">
<field name="name">license_rdf</field>
<field name="originalName">license_rdf</field>
<field name="format">application/rdf+xml; charset=utf-8</field>
<field name="size">25720</field>
<field name="url">https://www.tdx.cat/bitstream/10803/129635/4/license_rdf</field>
<field name="checksum">ed8ee1383d1f11db91aa1c9d6837fe88</field>
<field name="checksumAlgorithm">MD5</field>
<field name="sid">4</field>
<field name="drm">open access</field>
</element>
</element>
</element>
<element name="bundle">
<field name="name">TEXT</field>
<element name="bitstreams">
<element name="bitstream">
<field name="name">TMA1de1.pdf.txt</field>
<field name="originalName">TMA1de1.pdf.txt</field>
<field name="description">Extracted Text</field>
<field name="format">text/plain</field>
<field name="size">319616</field>
<field name="url">https://www.tdx.cat/bitstream/10803/129635/5/TMA1de1.pdf.txt</field>
<field name="checksum">83e99f7e221b865c2d9a339620cf9d60</field>
<field name="checksumAlgorithm">MD5</field>
<field name="sid">5</field>
<field name="drm">open access</field>
</element>
</element>
</element>
<element name="bundle">
<field name="name">MEDIA_DOCUMENT</field>
<element name="bitstreams">
<element name="bitstream">
<field name="name">TMA1de1.pdf.xml</field>
<field name="originalName">TMA1de1.pdf.xml</field>
<field name="description">Document Consulta</field>
<field name="format">text/xml</field>
<field name="size">106</field>
<field name="url">https://www.tdx.cat/bitstream/10803/129635/6/TMA1de1.pdf.xml</field>
<field name="checksum">3c64ce47bbd4a910162b02e49aea78a4</field>
<field name="checksumAlgorithm">MD5</field>
<field name="sid">6</field>
<field name="drm">open access</field>
</element>
</element>
</element>
</element>
<element name="others">
<field name="handle">10803/129635</field>
<field name="identifier">oai:www.tdx.cat:10803/129635</field>
<field name="lastModifyDate">2023-10-13 12:33:36.956</field>
<field name="drm">open access</field>
</element>
<element name="repository">
<field name="name">TDX (Tesis Doctorals en Xarxa)</field>
<field name="mail">pir@csuc.cat</field>
</element>
</metadata>
<?xml version="1.0" encoding="UTF-8" ?>