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Linked Open Data
1/f Electrical Noise in Planar Resistors: The Joint Effect of a Backgating Noise and an Instrumental Disturbance
Identificadores del recurso
http://oa.upm.es/2038/
Procedencia
(Archivo Digital UPM)

Ficha

Título:
1/f Electrical Noise in Planar Resistors: The Joint Effect of a Backgating Noise and an Instrumental Disturbance
Tema:
Electrónica
Descripción:
Any planar resistor (channel) close to a conducting layer left floating (gate) forms a capacitor C whose thermal voltage noise (kT/C noise) has a backgating effect on the sheet resistance of the channel that is a powerful source of 1/f resistance noise in planar resistors and, hence, in planar devices. This 1/f spectrum is created by the bias voltage V DS applied to the resistor, which is a disturbance that takes it out of thermal equilibrium and changes the resistance noise that existed in the unbiased device. This theory, which gives the first electrical explanation for 1/f electrical noise, not only gives a theoretical basis for the Hooge's formula but also allows the design of proper shields to reduce 1/f noise.
Fuente:
IEEE Transactions on Instrumentation and Measurement, ISSN 0018-9456, 2008-03, Vol. 57, No. 3
Idioma:
English
Relación:
http://oa.upm.es/2038/1/INVE_MEM_2008_57462.pdf
http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=4447379&arnumber=4413160&count=26&index=6
info:eu-repo/semantics/altIdentifier/doi/10.1109/TIM.2007.911642
Autor/Productor:
Izpura Torres, José Ignacio
Editor:
E.T.S.I. Telecomunicación (UPM)
Derechos:
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/openAccess
Fecha:
2008-03
Tipo de recurso:
info:eu-repo/semantics/article
Artículo
PeerReviewed
Formato:
application/pdf

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      1. <bibo:abstract datatype="http://www.w3.org/2001/XMLSchema#string">Any planar resistor (channel) close to a conducting layer left floating (gate) forms a capacitor C whose thermal voltage noise (kT/C noise) has a backgating effect on the sheet resistance of the channel that is a powerful source of 1/f resistance noise in planar resistors and, hence, in planar devices. This 1/f spectrum is created by the bias voltage V DS applied to the resistor, which is a disturbance that takes it out of thermal equilibrium and changes the resistance noise that existed in the unbiased device. This theory, which gives the first electrical explanation for 1/f electrical noise, not only gives a theoretical basis for the Hooge's formula but also allows the design of proper shields to reduce 1/f noise.</bibo:abstract>

      2. <bibo:authorList resource="http://oa.upm.es/id/eprint/2038#authors" />

      3. <bibo:issue>3</bibo:issue>

      4. <bibo:status resource="http://purl.org/ontology/bibo/status/peerReviewed" />
      5. <bibo:status resource="http://purl.org/ontology/bibo/status/published" />

      6. <bibo:volume>57</bibo:volume>

      7. <dct:creator resource="http://oa.upm.es/id/person/ext-f9ef8f3627151b330a634f75bd09a0dd" />

      8. <dct:date>2008-03</dct:date>

      9. <dct:isPartOf resource="http://oa.upm.es/id/repository" />
      10. <dct:isPartOf resource="http://oa.upm.es/id/publication/ext-00189456" />
      11. <dct:publisher resource="http://oa.upm.es/id/org/ext-af0a9a5baed87c407844a3f5db44597c" />
      12. <dct:subject resource="http://oa.upm.es/id/subject/electronica" />

      13. <dct:title datatype="http://www.w3.org/2001/XMLSchema#string">1/f Electrical Noise in Planar Resistors: The Joint Effect of a Backgating Noise and an Instrumental Disturbance</dct:title>

      14. <ep:hasDocument resource="http://oa.upm.es/id/document/1783" />
      15. <ep:hasDocument resource="http://oa.upm.es/id/document/52016" />
      16. <ep:hasDocument resource="http://oa.upm.es/id/document/189582" />
      17. <ep:hasDocument resource="http://oa.upm.es/id/document/189585" />
      18. <ep:hasDocument resource="http://oa.upm.es/id/document/189587" />
      19. <ep:hasDocument resource="http://oa.upm.es/id/document/189592" />
      20. <rdf:type resource="http://purl.org/ontology/bibo/AcademicArticle" />
      21. <rdf:type resource="http://purl.org/ontology/bibo/Article" />
      22. <rdf:type resource="http://eprints.org/ontology/ArticleEPrint" />
      23. <rdf:type resource="http://eprints.org/ontology/EPrint" />
      24. <rdfs:seeAlso resource="http://oa.upm.es/2038/" />

      </rdf:Description>

    17. <rdf:Description about="http://oa.upm.es/id/subject/electronica">

      1. <rdf:type resource="http://www.w3.org/2004/02/skos/core#Concept" />

      2. <skos:prefLabel lang="en">Electronics</skos:prefLabel>

      3. <skos:prefLabel lang="es">Electrónica</skos:prefLabel>

      </rdf:Description>

    18. <rdf:Description about="http://oa.upm.es/id/org/ext-af0a9a5baed87c407844a3f5db44597c">

      1. <foaf:name datatype="http://www.w3.org/2001/XMLSchema#string">IEEE</foaf:name>

      2. <rdf:type resource="http://xmlns.com/foaf/0.1/Organization" />

      </rdf:Description>

    19. <rdf:Description about="http://oa.upm.es/id/person/ext-f9ef8f3627151b330a634f75bd09a0dd">

      1. <foaf:familyName datatype="http://www.w3.org/2001/XMLSchema#string">Izpura Torres</foaf:familyName>

      2. <foaf:givenName datatype="http://www.w3.org/2001/XMLSchema#string">José Ignacio</foaf:givenName>

      3. <foaf:name datatype="http://www.w3.org/2001/XMLSchema#string">José Ignacio Izpura Torres</foaf:name>

      4. <rdf:type resource="http://xmlns.com/foaf/0.1/Person" />

      </rdf:Description>

    20. <rdf:Description about="http://oa.upm.es/id/publication/ext-00189456">

      1. <bibo:issn>00189456</bibo:issn>

      2. <foaf:name datatype="http://www.w3.org/2001/XMLSchema#string">IEEE Transactions on Instrumentation and Measurement</foaf:name>

      3. <owl:sameAs resource="urn:issn:00189456" />
      4. <rdf:type resource="http://purl.org/ontology/bibo/Collection" />

      </rdf:Description>

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